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    • 专利摘要:
    The present invention relates to a glow discharge spectrometry system comprising a glow discharge lamp adapted to receive a solid sample (10) and form a glow discharge etching plasma (19). According to the invention, a system (100) for in situ measurement of the erosion crater depth generated by etching the sample (10) comprises an optical separator (3) optical means (4) adapted to direct, respectively , a first incident beam (21) to a first region (11) of the sample exposed to the etching plasma and a second incident beam (22) to a second area (12) of the same face of the protected sample vis-a-vis to the etching plasma and an optical recombination device (3) adapted to form an interferometric beam (30) so as to determine the depth (d) of the erosion crater.
    公开号:FR3020684A1
    申请号:FR1453997
    申请日:2014-04-30
    公开日:2015-11-06
    发明作者:Simon Richard；Jean-Paul Gaston；Olivier Acher；Patrick Chapon
    申请人:Horiba Jobin Yvon SAS；
    IPC主号:
    专利说明:

    [0001] Technical Field to Which the Invention relates The present invention relates to apparatus and methods for glow discharge elementary analysis (GD or Glow Discharge in English), optical emission spectrometry (GD-OES) or mass spectrometry ( GD-MS).
    [0002] More specifically, the invention relates to an apparatus and method for Glow Discharge Spectrometry (GDS) suitable for in situ measurement of the etching depth of a sample exposed to this glow discharge plasma. The invention is particularly applicable to a system or method for analyzing materials by glow discharge spectrometry, this analysis being solved as a function of the etching depth in the sample. BACKGROUND ART Glow discharge spectrometry is an analytical technique that makes it possible to analyze the elemental and / or molecular chemical composition of homogeneous or multilayer solid samples. The measurement can be at the heart of a sample or be solved in depth. Glow discharge spectrometry is commonly used to analyze the composition or composition profile of solid samples. The principle of glow discharge spectrometry consists in exposing a limited area of a face of a sample to an etching plasma. Plasma tears atoms off the surface of the sample, and places them in ionized or excited electronic states. The nature of these atoms is determined by the analysis of their plasma emission spectrum, or the mass spectrum of the ions produced in the plasma. As the atoms are torn off, a crater bursts on the surface of the sample as a function of the plasma exposure time. An analysis of the signals detected by spectrometry as a function of the erosion time, thus makes it possible to obtain the composition of the sample resolved as a function of the etching time. However, the etching rate generally varies during the etching process. The etching rate varies in particular as a function of the composition of the region of the sample exposed to the plasma and also as a function of transient phenomena related to the start of the plasma.
    [0003] However, it is desirable to analyze the composition as a function of the erosion crater depth generated by the plasma, and not only as a function of time during the erosion plasma. There are different methods for determining erosion crater depth as a function of time.
    [0004] The most widely used method is based on a calibration of the erosion rate for reference samples of known composition. This calibration requires making different measurements on different reference samples and assumes assumptions such as for example a known and / or homogeneous density. The accuracy of the result obtained remains uncertain.
    [0005] Other methods of analysis by glow discharge spectrometry and simultaneous determination of etching depth have been proposed. WO 2007/113072 A1 discloses a method for determining a height variation due to erosion of the surface of a sample exposed to an etching plasma in a GDS apparatus. The method described is based on the use of a chromatic confocal displacement sensor, which detects a variation in the position of the plane of the surface of the sample relative to its initial position before the start of the plasma. The patent document CN102829732 describes another device for responding to the same technical problem, based on a triangulation sensor. In this case, the sensor measures the position of a laser beam reflected by the surface whose depth is desired. On the other hand, the patent document US6784989 HORIBA Jobin Yvon describes the use of a two-wave laser interferometer. According to this document, an optical beam is divided into two secondary beams, one of the secondary beams being reflected on the surface of the sample exposed to the etching plasma, and the other secondary beam being reflected on a fixed reference surface, external to the sample. The optical recombination of the two reflected beams forms an interferometric beam, which varies as a function of the etch depth in the sample. However, all these optical measuring methods are sensitive to the heating induced by the etching plasma which produces a dilation of the glow discharge chamber. A bias can therefore be introduced, since one can not differentiate the erosion of the crater and the expansion of the plasma chamber. These methods for determining the erosion depth are therefore of limited precision and do not in practice make it possible to achieve a level of precision below the micron. In addition, triangulation optical devices generally require an optical window with flat and parallel faces, sometimes of large size, to let the optical beams pass. However, an optical emission spectrometry (GD-OES) glow discharge apparatus generally comprises a plasma chamber having an axial opening of limited size and sealed by a lens intended to collect the optical emission flux and not by a flat window.
    [0006] The replacement of the collection lens of the optical emission stream with a flat window would imply a significant reduction of the collected optical emission signal, and thus a loss of precision of the emission spectrometry measurements. There is therefore a need for a system and method for measuring the etch depth of a sample in a glow discharge spectrometry apparatus that is accurate and does not affect the glow discharge spectrometry signals. OBJECT OF THE INVENTION The object of the present invention is to overcome the drawbacks of the prior systems and more precisely proposes a system for glow discharge spectrometry and in situ measurement of the etch depth of a sample comprising a suitable glow discharge lamp. for receiving a solid sample and forming a glow discharge etching plasma, the sample having, on the same face, a first etched plasma etched area and a second etched plasma protected area; a spectrometer coupled to the glow discharge lamp, the spectrometer being adapted to measure, as a function of the exposure time of the first zone to said plasma, at least one signal representative of the glow discharge plasma by optical emission spectrometry and / or by mass spectrometry of said glow discharge plasma, and an in situ measurement system of the erosion crater depth generated by etching the first sample area as a function of the exposure time to said plasma. According to the invention, the etching depth measurement takes as a zero depth reference, at each instant, the second zone of the sample not exposed to the plasma. In this way, the measurement is made insensitive to dilations of the etching chamber. According to the invention, the system for measuring the depth of the erosion crater comprises a light source adapted to emit a light beam; an optical splitter adapted to spatially or angularly separate the light beam into a first incident beam and a second incident beam; the glow discharge lamp (60) being adapted to provide a first optical path to the first region and a second optical path to the second region of the sample; optical means adapted to direct, respectively, the first incident beam towards the first zone along the first optical path and the second incident beam towards the second zone following the second optical path, so as to form a first beam reflected by reflection on the first zone and, respectively, a second beam reflected by reflection on the second zone, an optical recombination device adapted to recombine the first reflected beam and the second reflected beam and to form an interferometric beam; detection means adapted to receive the interferometric beam and to detect an interferometric signal as a function of the exposure time of the first zone to said plasma; processing means adapted to process the interferometric signal so as to determine the depth (d) of the erosion crater as a function of the exposure time of the first zone to said plasma, taking as a zero depth reference the second unexposed zone plasma.
    [0007] According to a particular and advantageous aspect of the invention, the detection means and the processing means are adapted to process the interferometric signal and to extract a measure of the amplitude (A) and the phase (PHI) of the interferometric signal according to the exposure time of the first zone to said plasma. Preferably, the first incident beam forms an angle of incidence less than ten degrees from the normal to the surface of the first zone of the sample, and preferably non-zero and approximately equal to five degrees. Advantageously, the sample forms the cathode of the discharge lamp and the discharge lamp comprises a cylindrical anode having a first axial opening adapted for the passage of the first incident beam and the first reflected beam, and the anode comprises a second opening offset from the axis of the anode, the second opening being provided with an optical window adapted for the passage of the second incident beam and the second reflected beam. According to one aspect of the invention, the optical separator comprises at least one polarization separating prism.
    [0008] Preferably, the optical separator comprises a Wollaston prism, the optical recombination device comprises another Wollaston prism, and the optical means adapted to direct, respectively, the first incident beam towards the first zone and the second incident beam towards the second zone. comprise a lens optical system, said Wollaston prisms being arranged in the focal plane of this lens optical system.
    [0009] In a particular embodiment, the optical separator and the optical recombination device are merged. In one embodiment, the spectrometer comprises a mass spectrometer coupled to the discharge lamp via an aperture, the mass spectrometer being adapted to measure at least one signal representative of ionized species of the glow discharge plasma by mass spectrometry. In another embodiment, the spectrometer comprises an optical spectrometer coupled to the discharge lamp via an optical window or via a lens optical system, the optical spectrometer being adapted to measure at least one optical transmission signal representative of species excited from the glow discharge plasma, preferably in a direction normal to the surface of the first region of the sample. According to a particular aspect of this embodiment, the glow discharge spectrometry system comprises an optical spectrometer adapted to measure at least one optical emission signal representative of excited species of the glow discharge plasma, and the light source is adapted to emitting a light beam at a selected wavelength outside a range of optical emission atomic line wavelength of the glow discharge plasma. In a particular and advantageous variant, the detection means comprise a polarimeter adapted to measure at least one polarized component of the interferometric beam.
    [0010] Particularly advantageously, said polarimeter comprising other optical separation means arranged to separate the interferometric beam into a plurality of polarized components and a plurality of detectors adapted to respectively detect a polarized component of the plurality of polarized components of the signal. interferometer.
    [0011] The invention also relates to a method of glow discharge spectrometry and in situ measurement of the etching depth of a sample comprising the following steps: - placing a solid sample in a glow discharge lamp, the sample having, on the same face, a first etched plasma etched area and a second etched plasma protected area; detection and analysis by optical emission spectrometry and / or mass spectrometry of at least one representative signal of excited and / or ionized species of the glow discharge plasma, as a function of the exposure time of the first zone plasma; - emission of a light beam; spatial or angular separation of the light beam into a first incident beam and a second incident beam; - Orientation, respectively, of the first incident beam to the first zone following a first optical path and the second incident beam to the second zone along a second optical path, so as to form a first beam reflected by reflection on the first zone and respectively a second beam reflected by reflection on the second area, - optical recombination of the first reflected beam and the second reflected beam and to form an interferometric beam; detecting the interferometric beam to form at least one interferometric signal as a function of the time of exposure of the first zone to said plasma and processing of the at least one interferometric signal to extract a measurement of the depth of the erosion crater as a function of time of exposure of the first zone to said plasma. According to one particular aspect, the method for in situ measurement of the etching depth of a sample further comprises the following steps: processing of the interferometric signal to extract a measurement of the phase (PHI) of the interferometric signal as a function of time exposing the first area to said plasma; determination at each instant t of an instant etching speed Ve of the first zone of the sample, by application of the following formula: LAMBDA x dPHI, 4 x 7r dt where LAMBDA represents the wavelength of the light source and dPHI / dt the derivative with respect to the phase time (PHI) of the measured interferometric signal. According to a particular and advantageous embodiment, the etching plasma operates in pulsed mode, alternating between a phase in which the plasma is lit and another phase where the plasma is off, and the method of in situ measurement of the plasma. etching depth comprises the following steps: - the detection of the at least one interferometric signal is triggered during the phases when the plasma is lit and / or respectively during the phases when the plasma is off, so as to differentiate an interferometric signal associated with the phases where the plasma is ignited by another interferometric signal associated with the phases in which the plasma is off, - processing of the interferometric signal associated with the phases in which the plasma is lit and / or respectively with the other interferometric signal associated with the phases in which the plasma is extinguished so as to correct the depth measurement of the erosion crater of induced drifts during the phases where the sma is on and / or respectively during the phases when the plasma is off. The present invention also relates to the features which will emerge in the course of the description which follows and which will have to be considered individually or in all their technically possible combinations. This description, given by way of nonlimiting example, will make it easier to understand how the invention can be made with reference to the appended drawings in which: FIG. 1 schematically represents a system for measuring in situ the etching depth of a sample in a glow discharge spectrometry apparatus according to an embodiment of optical emission spectrometry; - Figure 2 shows schematically a sectional view of a glow discharge lamp adapted according to an embodiment; FIG. 3 diagrammatically represents another example of an in situ measurement system of the etching depth of a sample in a glow discharge spectrometry apparatus by optical emission spectrometry; FIG. 4 schematically represents an example of an in situ measurement system of the etching depth of a sample in an optical emission glow discharge spectrometry apparatus according to another embodiment. Apparatus FIG. 1 schematically illustrates an in situ measurement system of the etch depth of a sample in a glow discharge spectrometry (GDS) apparatus. There is shown a sample 10 which is located in a plasma chamber of a glow discharge spectrometry apparatus 60. By way of example, the lens 4 hermetically closes an opening, for example an axial opening, in the etching chamber of the GDS device. The sample has a face of which a first zone 11 is exposed to the etching plasma while another zone 12 is protected from this same etching plasma. The principle of in situ measurement of the etching depth is based on the integration of an optical interferometry device. Advantageously, the optical components of this interferometer are arranged outside the plasma chamber of the discharge lamp. The interferometer essentially comprises a light source, an optical beam splitter 3 which separates the source beam into two beams propagating along two separate optical paths, an optical beam combiner which recombines the previously separated beams, a source-detector separator 5 , a detector 8 and a signal processing system.
    [0012] The example of FIG. 1 illustrates an example of an optical interferometer operating in polarized light. More specifically, the measurement system comprises a source 1, which is for example a laser source or a laser diode. The light source 1 emits a light beam 2, preferably monochromatic, for example at a wavelength of 635 nm, or else 780 nm, 532 nm, 405 nm. In the example of FIG. 1, there is a diaphragm 6, or source hole, for limiting the spatial extent of the source beam 2. A half-wave plate (also called J2) 7 makes it possible to determine the polarization axis of the source beam. A source-detector separator 5, for example of polarization separator cube type, is arranged on the source beam 2. The orientation of the axis of the half-wave plate 7 relative to the axes of the separator 5 makes it possible to adjust the power of the source beam 2. Preferably, the polarization axis of the polarizer 7 is oriented so that the incident incident beams 21, 22 have the same amplitude. The interferometric beam detected has a maximum intensity when the amplitude of the beams that recombine is equal.
    [0013] In the example of FIG. 1, the source-detector separator 5 directs the source beam 2 towards a k / 2 blade (reference sign 9 in FIG. 1) and then to another optical beam splitter 3. Advantageously, the blade k / 2 is oriented so that the incident incident beams 21, 22 have the same amplitude. The detected interferometric beam has maximum interferometric contrast when the amplitude of the recombinant beams is equal. The optical separator 3 is for example a polarization separator cube, whose polarization axes are inclined at 45 degrees with respect to the axis of the linearly polarized incident beam 2 which has passed through the blade k / 2. By way of example, the optical separator 3 is a Wollaston prism which is adapted to angularly separate the incident beam into two incident beams 21, 22 linearly polarized according to orthogonal polarization states therebetween. Thus, a first polarized incident beam 21 is directed in a first direction and a second polarized incident beam 22 is directed in a second direction. By construction of the Wollaston prism 3, the first direction and the second direction are angularly separated by an angle of between 0.1 and 20 degrees.
    [0014] The lens 4 is mounted on an opening of the discharge lamp so as to seal under vacuum while allowing optical access to the interior of the discharge lamp. Preferably, the optical separator 3 is disposed at the focus of the lens 4. Thus, the lens 4 forms two spatially separated incident beams 21, 22 which propagate in parallel in the discharge lamp 60 towards one side of the sample .
    [0015] The small spatial spacing of the incident beams 21 and 22 makes it possible to couple them to the discharge lamp via the lens 4 already present. It is therefore not necessary to make a new optical aperture in the enclosure of the discharge lamp 60 to pass two separate optical beams 21 and 22. In a variant, instead of the Wollaston prisms, it is possible to use beam shifters and replace lens 4 with a window.
    [0016] Preferably, the sample has a planar face which is intended to be partially exposed to the etching plasma. The discharge lamp 60 is adapted to allow the first incident beam 21 to follow a first optical path towards a first zone 11 of the sample, which is intended to be exposed to the plasma. On the other hand, the lamp is specially adapted to allow the second incident beam 22 to follow a second optical path towards a second zone 12 of the sample, which however remains protected vis-à-vis the etching plasma. Thus, the lens 4 focuses the first incident beam 21 on the first zone 11 of the sample which is exposed to the etching plasma. On the other hand, the lens 4 focuses the second incident beam 22 on the second zone 12 of the sample which is protected from the etching plasma. An example of a discharge lamp specially adapted to allow these two optical paths is described in this document in connection with FIG. 2. By reflection on the first zone 11, the first incident beam 21 forms a first reflected beam 31. In a similar manner by reflection on the second zone 12, the second incident beam 22 forms a second reflected beam 32. In the example illustrated in FIG. 1, the sample has a plane face and the etching of the first zone 11 generates a crater at flat bottom. In addition, in this example, the incident beams 21, 22 are reflected on the sample at a zero incidence angle. In this case, the first reflected beam 31 propagates in the direction opposite to the first incident beam 21, and, respectively, the second reflected beam 32 propagates in the direction opposite to the first incident beam 22. The lens 4 collects the first reflected beam 31 and the second reflected beam 32 and directs them to a recombination optical system, which is here the same Wollaston prism 3 used to separate the incident beam. The Wollaston prism recombines the first reflected beam 31 and the second reflected beam 32 to form an interferometric beam 30. The interferometric beam passes through the k / 2 plate and is incident on the source-detector polarizing separator 5 which sends a polarization component of the interferometric beam towards a filter 18 and a detector 8. As indicated above, the orientation of the blade 9 is such that the polarization of the incident beam 2 is at 45 ° to the axes of the prism of Wollaston 3. This provision has the beneficial effect that the pair consisting of the blade 9 and the separator 5 forms, in the return direction, a polarization analyzer at 45 ° to the axes of the Wollaston prism 3, which effectively makes it possible to generate an interferometric signal by sum amplitudes of the beams 31 and 32. The filter 18 is a spectral filter, preferably centered on the emission wavelength of the light source 1. Ltre 18 eliminates stray light from plasma or ambient light. The filter 18 is for example an interference filter centered at 635 nm with a spectral width of 10 nm.
    [0017] The detector 8 detects an interferometric signal 40 as a function of time. A processing system makes it possible to digitally process this interferometric signal 40 so as to extract information on the amplitude and the phase of the interferometric signal. During the etching of the first zone 11 of the sample, the first optical path lengthens, while the second optical path remains stable. The optical path difference therefore increases as a function of the etching of the first zone 11 of the sample. Thus, the detector detects an interferometric signal 40 whose intensity is representative of the etching depth of the first zone 11 of the sample. The first optical path forms the measuring arm of the interferometer: it goes from the beam splitter-combiner 3 to the first zone 11 of the sample and returns to the beam splitter-combiner 3. The second optical path forms the arm of the beam. interferometer reference: it goes from the beam combiner 3 separator to the second zone 12 of the sample and returns to the beam combiner separator 3. In a manner known otherwise, in the case of an opaque and homogeneous sample, the analysis interferometric signal can determine the depth of etching in the sample. Indeed, in this case, the interferometric signal has a sinusoidal shape as a function of time. The number of periods of the intensity curve makes it possible to determine the engraving depth, knowing the wavelength of the source beam. The interferometric measurement error of the depth thus obtained is of the order of k / 8, where 2 ,, is the wavelength of the source beam. During the spraying of the sample the crater depth increases and therefore the phase difference between the two reflected waves 31, 32 varies as a function of time t. More precisely, let us note .5 (t) the relative phase shift between the first reflected beam 31 and the second reflected beam 32. Where k = 27c / X, d (t) represents the etching depth as a function of time. The following relations are expressed as rv the reflection coefficient on the first zone 11 and rH the reflection coefficient on the second zone 12: We denote 1 (t) the intensity of the interferometric beam as a function of time, Ev the amplitude of the electric field relative to the incident beam 21 on the first zone 11, that is to say in the crater, EH the amplitude of the electric field relative to the incident beam 22 on the second zone 12. The intensity of the interferometric signal detected s Written according to the following relation: 1 If the etch rate is constant, the optical path difference increases linearly and thus the detected intensity varies sinusoidally as a function of time. In the case of a homogeneous material, the result of a series of interferometric measurements as a function of time is then a set of points on a sinusoidal curve. For a sample comprising a multilayer stack of different materials, the etching rate generally depends on the composition of each layer. If the layers are opaque, the series of measured points form by interpolation an experimental curve constituted by pieces of sinusoids of different periods. To determine the depth d (t) of the etched crater, the number of periods detected since the beginning of the etching is estimated. Indeed a complete sinusoid period is equivalent in length to a wavelength 2 ,, of the light source (eg the laser) used. But the difference in optical path between the two waves is at each moment equal to twice the depth of the etched crater. Each period on the intensity curve therefore corresponds to an engraved depth equal to k / 2.
    [0018] Between the beginning of the etching and a time t, if the number of periods on the intensity measurement curve 1 (t) is equal to an integer N, then the etched depth of the crater is equal to N * 2.12 . For a homogeneous sample, a simple visual estimation of the number of periods on the intensity curve of the interferometric signal 1 (t) thus makes it possible to determine the engraving depth with a precision of the order of λ / 8, which corresponds in the case of the laser used at about 80 nm. For better accuracy, it is also possible to determine the frequency of the intensity curve using a fit, for example by a sinusoidal function. This makes it possible to obtain even greater precision on the engraving depth. However, in the case where the sample comprises a stack of thin and / or transparent layers, the measurement of the intensity signal 1 (t) of the interferometric beam as a function of time offers only limited accuracy and sensitivity. Generally, the plasma chamber of a discharge lamp has only one optical access allowing an optical path usually limited to the first zone 11 exposed to the etching plasma. Patent document FR1250594 describes an example of a glow discharge lamp comprising a hollow cylindrical anode and a single optical access on the axis of the anode. FIG. 2 schematically represents a sectional view of a discharge lamp adapted especially to an interferometric system according to an example embodiment. The discharge lamp comprises an anode 15, a cathode formed by the sample 10 itself, and an electrically insulating piece 16 disposed between the anode 15 and the sample 10. The anode 15 has a generally cylindrical shape illustrated on Figure 2 in section along the axis of the cylinder. The electrically insulating part 16 also has a cylindrical shape, and has a coaxial cylindrical opening into which the anode is inserted. The part 16 makes it possible to precisely position the anode with respect to the cathode. The tubular end of the anode 15 is thus positioned a few tenths of millimeters from the surface of the sample. The plasma carrier gas, which is usually a rare gas, is injected through the interior of the anode, and the gases are discharged through the gap between the end of the anode and the surface of the sample. The precise positioning of the anode 15, the insulating part 16 and the sample 10 makes it possible to confine the plasma in a central tubular zone inside the anode. The insulating piece 16 is generally in contact with the face of the sample outside the zone 11 exposed to the etching plasma so as to protect the face of the sample outside the first zone 11. The discharge lamp thus allows to a plasma 19 selectively etching the first zone 11 of the sample which faces the tubular end of the anode 15.
    [0019] The axial opening 41 of the anode provides a first optical path to a first zone 11 of the sample which is exposed to the plasma 19. By reverse return, the first reflected beam 31 at normal incidence on the first zone 11 propagates following the same optical path. In the case of optical emission spectrometry, this first optical path is also used to collect an optical emission beam emitted by the plasma 19.
    [0020] In the example illustrated in FIG. 2, the discharge lamp is specially adapted to provide a second optical path to a second zone 12 of the sample which is protected with respect to the plasma 19. More precisely, it has been formed on the one hand in the anode 15 an opening 42, which is provided with an optical window 14 and on the other hand an opening 17 in the insulating part 16. The opening 42 and the opening 17 are aligned, for example along an axis offset and preferably parallel to the axis of the anode 15. Thus, the axial opening 41 and the off-axis opening 17 do not communicate with each other. The window 14 limits the leakage of gas and or plasma towards the second zone 12 of the sample. The window 14 is for example a glass slide with flat and parallel faces. The opening 42, the optical window 14 and the opening 17 make it possible to direct the second incident beam 22 towards the second zone 12 of the sample. This defines a second optical path passing through the optical window 14 and up to a second zone 12 of the sample which remains protected from the etching plasma 19. The second incident beam 22 can therefore be directed through the window 14 and the opening 17 to the second zone 12 of the sample, which is spatially separated from the first zone 11, but which is situated on the same face of the sample 10. The second reflected beam 32 preferably follows the second path optically in the opposite direction to the optical window 14. Thus, the first beam and the second beam follow separate optical paths, while being reflected on the same face of the sample.
    [0021] This configuration makes it possible to limit the drifts of the interferometric signal due to the expansions of the discharge lamp induced by the heating of the plasma. FIG. 3 illustrates another example of an in situ measurement system of the etching depth of a sample in a glow discharge spectrometry apparatus. The system comprises a block 50 which comprises at least one light source and at least one detector located outside a discharge lamp 60.
    [0022] The discharge lamp 60 comprises a cylindrical anode 15 of hollow tubular section, an electrically insulating member 16 and a sample 10 forming the cathode of the discharge lamp. A lens 4 is for example placed on an opening of the vacuum chamber of the discharge lamp 60. Preferably, the lens 4 is disposed on the axis of the anode 15. The anode 15 is similar to that described with reference to FIG. 2. This anode 15 is of cylindrical shape and has an axial opening forming a first optical path between optical path between the source-detector block 50 and the first zone 11 of the sample 10 which is exposed to the etching plasma.
    [0023] The anode 15 of the discharge lamp comprises another opening, offset with respect to the axis of the anode 15, and provided with an optical window 14. The electrically insulating part 16 disposed between the anode 15 and the Sample 10 has a cylindrical hole, so as to form a second optical path between the source-detector block 50 and the second area 12 of the sample 10 which is protected from the etching plasma.
    [0024] In the example illustrated in FIG. 3, the sample is plane, and disposed in the plane YZ of an orthonormal frame (X, Y, Z). The normal to the plane of the sample is parallel to the X axis. It is assumed that the etching plasma generates a flat-bottomed erosion crater on the first zone 11 of the sample 10. A beam splitter-combiner 13 is arranged on the optical path of the source beam 2 between the source-detector block 50 and the discharge lamp 60. For example, the beam splitter-combiner 13 consists of a Wollaston prism. The Wollaston prism 13 angularly separates the incident beam 2 into a first incident beam 21 and a second incident beam 22, for example at an angle of between 0.1 and 10 degrees, and preferably about 1 degree.
    [0025] The beam splitter-combiner 13 is placed at a distance L from a lens 4. Preferably, the distance L is equal to the focal length of the lens 4, so that the beam splitter-splitter 13 is in the focal plane of the lens 4. The lens 4 directs the first incident beam 21 along the axis of the anode 15, parallel to the axis X, to the first zone 11 of the sample. By reflecting on this first zone 11, a first reflected beam 31 is returned towards the lens 4. Simultaneously, the lens 4 directs the second incident beam 22 to the optical window 14 and the opening 17 along the second optical path to the second zone 12 of the sample. By reflection on this second zone 12, a second reflected beam 32 is returned towards the lens 4.
    [0026] Since the prism 3 is in the focal plane of the lens 4, the incident beams 21 and 22 are parallel to each other and parallel to the axis X in the discharge lamp 60. Likewise, the reflected beams 31 and 32 are generally parallel between them and parallel to the X axis in the discharge lamp 60. The lens 4 focuses the first and second reflected beams 31, 32 on the Wollaston prism 13, which recombines them into an interferometric beam 30 towards a detector in the source-detector block 50. The arrangement of the prism 13 in the focal plane of the lens 4 allows the recombination of the first and second reflected beams 31, 32 from the geometric point of view. FIG. 4 schematically represents a second embodiment of an in situ measurement system of the etching depth of a sample coupled to an optical emission glow discharge spectrometry apparatus. In this second embodiment, the system for measuring the etching depth is not a simple interferometer but a polarimetric interferometer. In FIG. 4, the same elements as those of FIG. 3 are indicated by the same reference signs. The apparatus of FIG. 4 comprises a discharge lamp 60, a source-detector block 50 and an optical mirror and / or lens system disposed between the discharge lamp 60 and the source-detector block 50. In the example illustrated in Figure 4, the sample 10 is plane, and disposed in the YZ plane of an orthonormal frame (X, Y, Z). The normal to the plane of the sample is parallel to the X axis. The source-detector block 50 comprises a light source 1, for example a laser or a laser diode. An optical isolator 25 is arranged on the source beam 2. An optical system here comprising planar mirrors 24 and 26 makes it possible to direct the source beam towards the lens 4 disposed on the axis of the discharge lamp 60.
    [0027] Particularly advantageously, the mirror 26 has an axial opening allowing the passage of an optical emission beam 71 emitted by the glow discharge plasma to an optical emission spectrometer 70. The system of FIG. beam splitter 13 and a beam combiner 23. The beam splitter 13 is disposed on the optical path of the source beam 2. The beam combiner 23 is arranged on the optical path of the reflected beams 31, 32. For example, the splitter beam 13 is a Wollaston prism and beam combiner 23 is another Wollaston prism. The advantage of a two-prism configuration is to allow the use of small prisms, which are compact and inexpensive.
    [0028] As a variant, as illustrated with reference to FIG. 3, the beam splitter-combiner may consist of a single and larger prism. The mirror 26 reflects the source beam 2 in the direction of the separating prism 13. Advantageously, the mirror 26 is mounted on a plate adjustable in orientation about an axis OZ and a 45 ° axis of the axes OX and OY. The separator plug 13 angularly separates the source beam 2 into a first incident beam 21 and a second incident beam 22. The prism 13 is constructed in such a way that the incident beams 21 and 22 are angularly separated in a YZ plane. an angle between 0.1 and 20 degrees, for example 2 degrees. The mirror 26 reflects the incident beams 21 and 22 towards the lens 4. In the example illustrated in FIG. 4, the incident beams 21 and 22 between the lens 4 and the sample are inclined with respect to the axis of the lens. lens 4, that is to say relative to the normal surface of the sample, an angle of between 1 and 20 degrees in the XY plane. The discharge lamp 60 is similar to that described with reference to FIG. 2 or FIG. 3. The discharge lamp comprises in particular a lens 4 disposed on the axis of the hollow cylindrical anode 15, forming a first optical path towards the first zone 11 of the sample 10, which is exposed to the glow discharge plasma at the end of the anode tube. The anode also has another off-axis opening, for example in a plane XZ, aligned on a cylindrical opening in the intermediate part 16 so as to form a second optical path to the second zone 12 of the sample. In FIG. 4, the second zone 12 does not appear because it is situated in a plane transverse to the plane of FIG. 4. On the one hand, the lens 4 focuses the first incident beam 21 on the first zone 11 of the sample which faces the tubular end of the anode and is exposed to the etching plasma. On the other hand, the lens 4 focuses the second incident beam 22 on the second zone 12 of the sample via the second optical path which passes through the anode 15 through an optical window off axis 14 and across the room intermediate 16 by an opening 17 off axis. The second zone 12 of the sample is thus protected from the etching plasma. The first incident beam 21 reflects by reflection on the first zone 11 a reflected beam 31, which is inclined symmetrically to the incident beam relative to the normal to the sample. Similarly, the second incident beam 22 forms, by reflection on the second zone 12, a reflected beam 32 which is inclined symmetrically to the incident beam relative to the normal to the sample. Thus, the reflected beam 31 propagates along an angularly separated optical path of the incident beam 21. Likewise, the reflected beam 32 propagates along an angularly separated optical path of the incident beam 22. In addition, the first and the second reflected beam are spatially separated and propagate in the discharge lamp along spatially distinct optical paths. The lens 4 collects the first reflected beam 31 and the second reflected beam 32, which appear superimposed in Figure 4, but are actually shifted in a plane YZ. The mirror 24 reflects the first and second reflected beams 31, 32 to a beam combiner prism 23. The lens 4 focuses the first and second reflected beams 31, 32 on the beam combiner 23, so as to geometrically superpose them. The beam combiner 23 optically recombines the first and second reflected beams 31, 32 and thus forms an interferometric beam 30 towards the source-detector block 50. The source-detector block comprises a filter 18, for example of the interferometric filter type, which eliminates the parasitic emission of plasma or ambient lighting. The detection system of FIG. 4 differs from those described with reference to FIGS. 1 and 3 in that it comprises a polarimetric detection system. More specifically, this polarimetric detection system comprises a non-polarizing separator 51, a first polarization separator 52 and a second polarization separator 53, a quarter-wave plate 54, a polarization rotator 33 and four detectors 81, 82, 83 84. In an alternative embodiment, the positions of the elements 54 and 33 can be reversed. Advantageously, the non-polarizing separator 51 will best preserve the state of polarization of the incident beam on both the transmitted and reflected channels. As such the non-polarizing laser separators, optimized for a narrow wavelength range will be preferable to broadband separators, covering for example all visible. The polarization rotator 55 associated with the polarization splitter 52 forms a linear polarization analyzer oriented at 45 ° to the axes of the recombinant separators 13 and 23. The detector 81 detects a polarization component of the interferometer beam 30 at + 45 ° and the detector 82 detects a polarization component 37 of the interferometric beam 30 at -45 ° of the axes of 13 and 23. The quarter-wave plate 54 associated with the polarization separator 53 forms a circular polarization analyzer, respectively 36 circular right and 38 circular left . The detector 83 detects the right circular polarization component 36 of the interferometer beam 30 and the detector 84 detects the left circular polarization component 38 of the interferometer beam 30. Thus, the detection system of FIG. 4 makes it possible to simultaneously detect the four components of polarization of the interferometric beam 30. From the four signals detected by the four detectors 81, 82, 83, 84, it is possible to deduce the phase shift between the reflected beam 31 by the first zone 11, that is to say say in the crater resulting from the etching of the sample, and the reflected beam 32 by the second zone 12, which serves as a reference. Similarly, the variation of the reflection coefficient of the first zone can be calculated from the measurement of the two linear polarization components or the two circular polarization components.
    [0029] Interferometric signal analysis is based on the classical approach. In the case where the sample consists of a homogeneous and absorbent material, it is possible to assume a semi-infinite medium. In the case where the sample comprises a stack of thin layers and / or transparent to the measurement wavelength, the analysis is based on numerical calculations of simulation and minimization of an error function.
    [0030] A measurement system as illustrated in Figure 4 provides four simultaneous measurements as a function of time. The set of measurements of the four detectors provides, by interpolation, four curves that can be analyzed either in real time, for a homogeneous sample, or after the acquisition of all the measurements, for a sample comprising a stack of layers. Knowing the refraction and optical absorption coefficients of a material at the measurement wavelength, it is possible to model the intensity and the phase of the interferometric beam as a function of the etching rate and the time. By integrating the etching rate, the etching depth in the sample is obtained as a function of time t. The analysis of these curves makes it possible to deduce a measurement of the etching rate in a material or a layer. The appearance of a discontinuity on a curve makes it possible to detect the etching of an interface between two layers or two different materials in a sample. More precisely, IL, the intensity of the linear component of the interferometric beam in a direction at 45 degrees with respect to the linear polarization H of the incident field on the first zone 11 and with respect to the linear polarization V of the incident field on the second zone 12. The detector 81 measures the intensity of the beam 35, that is to say IL ,. We read the intensity of the linear component of the interferometric beam in a direction of -45 degrees with respect to the linear polarization H of the incident field on the first zone 11 and with respect to the linear polarization V of the incident field on the second zone 12. The detector 82 measures the intensity of the beam 37, i.e. 1 [2. Here we note the intensity of the right circular component of the interferometric beam. The detector 83 measures the intensity of the beam 36, i.e. We have the intensity of the left circular component of the interferometric beam. The detector 84 measures the intensity of the beam 38, i.e. Ic2. The normalized intensity difference L between the intensities detected on the linear channels is calculated: 1 - Similarly, the normalized intensity difference C is calculated between the intensities detected on the circular paths: It is shown that the phase difference between the reflected waves 31 and 32 is written: (-I and ILI + 1L2 S (t) arctan Cz 1c2 + IL-) The variation of the reflectivity R (t) of the crater over time can also be deduced from the measurement of the two linear components IL, and read (or alternatively from the two circular components Here and lc2) by knowing the intensity of the two channels chosen at t = 0 is expressed according to the relation:, / 'L' oc (t) -P / L2. (t) LI L2 2 Alternatively, we can define the angle yr such tan (y) = N / pv. We can then deduce the pHipv reflectivity variations from the measurements by the relation sin2 (2y) = C2 + L2. Thick and opaque layers In the case of a sample or a layer of opaque material, the depth d (t) of the etched crater is obtained from the variation of the phase as a function of time with respect to the initial value: d (t) = [8 (t) - (0)] = arctan (C (t) arctan 4, r 4, r L (t)) L (0)) Thus, the measurement of the intensities of the four polarization components allows to directly deduce the depth d (t) of the crater as a function of the exposure time to the etching plasma. The local slope of d (t) indicates the instantaneous etch rate.
    [0031] The reflectivity is related to the index of the surface of the sample. The second embodiment has the advantage of allowing direct access to the phase difference between the two waves without the need for a sinusoidal fit, which is generally very inaccurate when the engraving depth d (t) is less than a period. Thin or transparent layers If the sample contains a stack of layers of a transparent material, such as silica or absorbent but thin layers, as in the case of hard disks, there is no simple relationship between engraved depth and phase difference. Indeed, the beams reflected on the sample undergo multiple reflections at the interfaces between the different layers. The interferometric beam detected is the result of the superposition of all these reflections. The interferometric beam detected is modulated in phase and intensity during etching. In the presence of transparent or very thin layers, the depth estimation is then based on a numerical model of the sample constructed from the knowledge of the materials constituting the different layers. This model takes into account the multiple reflections of the laser beams at the sample levels and makes it possible to calculate the phase and reflectivity of the waves reflected at each instant of the etching. The phase and reflectivity of the reflected wave are calculated by considering the propagation of the wave in the sample, which can be described by a matrix formalism (see, for example, P. Yeh, Optical waves in layered media, 1988, Wiley).
    [0032] The analysis of the etching of a sample is then based on simulation calculations of the numerical model, on a comparison with the measurements of intensity of the different components of polarization as a function of time and a minimization of the difference between the simulation calculations and measurements. For example, the minimization can be used on a least squares regression using as an adjustable parameter the etching rate of each layer, to allow to estimate by successive approximations the values which give the curves of phase and reflectivity which adapt the best to experimental ones. The least squares regression can be done by minimizing the difference between the theoretical and experimental curves of either phase alone, reflectivity alone, or phase and reflectivity at the same time. It is also possible to choose different minimizations for each layer. The choice between these different variants generally depends on the structure of the sample analyzed and the characteristics of the analyzed layers. A difference between the calculations and the measurements makes it possible to refine the numerical model and to detect, for example, the presence of intermediate layers, which present an index gradient between two superimposed materials. The results of interferometric measurements thus obtained were compared with the results of ellipsometric measurements taken on the same samples. The thicknesses obtained by polarimetric interferometry (device according to the second embodiment) and by ellipsometry are very close, the difference between the measurements by polarimetric interferometry (near-normal incidence) and ellipsometry being generally less than 5%. The interferometric measurement system, preferably polarimetric, thus makes it possible to measure the etching depth d (t) in a sample as a function of the duration of exposure to the etching plasma. It is thus possible to evaluate the etching rate of each sample, and more precisely the etching rate of each layer of a sample formed of a stack of layers. It thus becomes possible to correct the detected emission spectrometry measurements as a function of the etching time t, to analyze them and to represent them as a function of the etching depth in the sample.
    [0033] Advantageously, the depth of etch measurement detailed above applies to a plasma operating in pulsed or pulsed mode. Pulsed mode is commonly used to avoid overheating a fragile sample, including for example a polymer material or layer. In pulsed mode, the plasma is alternately on (on) then off (off) with a predetermined frequency and a duty cycle. Erosion occurs only during the phase when the plasma is on. Two embodiments are considered here more particularly to improve the accuracy of etching depth measurement. In a first case, permanent sources of disturbance can be at the origin of drifts of the signals during the plasma phases on and off. In this case, the residual drift of the interferometric signal is measured in the off plasma phases, where there is no etching, and where only a drift of the signal is measured. It is thus possible to correct these drifts by interpolating them in the plasma on phases. In another case, intermittent sources of disturbance give rise to specific residual drifts only during the lit plasma phase, for example thermally induced drifts by the plasma. In this case, the interferometric signal is measured only during the off plasma phases, where there is no drift of the signal. These interferometric signal measurements are used during the plasma off phases to deduce, for example by interpolation, the etching depth as a function of time. The choice of one or the other of the methods described above depends on the relative amplitude 40 of the permanent and intermittent drifts.
    [0034] The system of the invention thus makes it possible to provide measurements by glow discharge spectrometry as a function of a reliable measurement of the etching depth d (t) in a sample, and not only as a function of time. The acquisition of interferometric signals is performed in situ and simultaneously with the acquisition of measurements by emission spectrometry or mass spectrometry. The measurement system illustrated in connection with FIG. 4 makes it possible to precisely determine the depth of etching in a sample or in the layers of a sample as a function of the exposure time to the etching plasma. The combination of optical (or mass) emission spectrometry and interferometric measurement makes it possible to relate the analysis of the elemental composition of a sample to the etching depth in this sample in an extremely precise manner. The interferometric measurement system of the invention is insensitive to mechanical noise, for example vacuum pump devices and insensitive to thermal drifts induced by the heating of the ablation plasma.
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. A glow discharge spectrometry system and in situ measurement of the etch depth of a sample comprising: - a glow discharge lamp (60) adapted to receive a solid sample (10) and form a plasma (19) for etching glow discharge, the sample (10) having, on the same face, a first zone (11) exposed to the etching plasma and a second zone (12) protected vis-à-vis the etching plasma; a spectrometer coupled to the glow discharge lamp (60), the spectrometer being adapted to measure, as a function of the exposure time of the first zone (11) to said plasma, at least one signal representative of the glow discharge plasma (19); ) by optical emission spectrometry and / or mass spectrometry; a system (100) for in situ measurement of the erosion crater depth generated by etching the first zone (11) of the sample (10) as a function of the exposure time to said plasma; characterized in that the erosion crater depth measuring system (100) comprises: a light source (1) adapted to emit a light beam (2); an optical splitter (3, 13, 23) adapted to spatially or angularly separate the light beam (2) into a first incident beam (21) and a second incident beam (22); the glow discharge lamp (60) being adapted to provide a first optical path to the first region (11) and a second optical path to the second region (12) of the sample, optical means (4, 14, 24) adapted to direct, respectively, the first incident beam (21) towards the first zone (11) along the first optical path and the second incident beam (22) towards the second zone (12) along the second optical path, so as to form a first reflected beam (31) by reflection on the first zone (11) and, respectively, a second reflected beam (32) by reflection on the second zone (12), an adapted optical recombination device (3, 13, 23) for recombining the first reflected beam (31) and the second reflected beam (32) and for forming an interferometric beam (30); detecting means (8, 81, 82, 83, 84) adapted to receive the interferometer beam (30) and detecting an interferometric signal (40) as a function of the exposure time of the first region (11) to said plasma; processing means adapted to process the interferometric signal (40) so as to determine the depth (d) of the erosion crater as a function of the exposure time of the first zone (11) to said plasma.
    [0002]
    2. A glow discharge spectrometry system according to claim 1 wherein the detection means (8, 81, 82, 83, 84) and the processing means are adapted to process the interferometric signal (40) and to extract a measure the amplitude (A) and the phase (PHI) of the interferometric signal (40) as a function of the exposure time of the first zone (11) to said plasma.
    [0003]
    A glow discharge spectrometry system according to claim 1 or 2 wherein the first incident beam (21) forms an angle of incidence less than ten degrees from the normal to the surface of the first zone (11) of the sample, and preferably not zero and approximately equal to five degrees.
    [0004]
    4. A glow discharge spectrometry system according to one of claims 1 to 3 wherein the sample (10) forms the cathode of the discharge lamp and wherein the discharge lamp comprises a cylindrical anode (15) having a first axial opening (41) adapted for the passage of the first incident beam (21) and the first reflected beam (31), and wherein the anode (15) has a second opening (42) offset with respect to the axis of the anode (15), the second opening (42) being provided with an optical window (14) adapted for the passage of the second incident beam (22) and the second reflected beam (32).
    [0005]
    5. Glow discharge spectrometry system according to one of claims 1 to 4 wherein the optical separator (3, 13, 23) comprises at least one polarization separating prism.
    [0006]
    The glow discharge spectrometry system according to claim 5 wherein the optical splitter (3, 13, 23) comprises a Wollaston prism (13) and the optical recombination device (3, 13, 23) comprises a further prism of Wollaston (23), and wherein the optical means (4, 14, 24) adapted to direct, respectively, the first incident beam (21) to the first zone (11) and the second incident beam (22) to the second zone (12) comprise a lens optical system (4), said Wollaston prisms (13, 23) being arranged in the focal plane of the lens optical system (4).
    [0007]
    7. Glow discharge spectrometry system according to one of claims 1 to 5 wherein the optical separator (3) and the optical recombination device (3) are combined.
    [0008]
    8. A glow discharge spectrometry system according to one of claims 1 to 7 wherein the spectrometer comprises a mass spectrometer coupled to the discharge lamp via an aperture, the mass spectrometer being adapted to measure at least one representative signal d ionized species of the glow discharge plasma (19) by mass spectrometry.
    [0009]
    The glow discharge spectrometry system according to one of claims 1 to 8, wherein the spectrometer comprises an optical spectrometer (70) coupled to the discharge lamp via an optical window or via a lens optical system (4), the optical spectrometer (70) being adapted to measure at least one optical emission signal representative of excited species of the glow discharge plasma (19), preferably in a direction normal to the surface of the first region (11) of the sample (10).
    [0010]
    The glow discharge spectrometry system according to one of claims 1 to 9, wherein the glow discharge spectrometry system comprises an optical spectrometer (70) adapted to measure at least one optical emission signal (71) representative of excited species of the glow discharge plasma (19), and wherein the light source (1) is adapted to emit a light beam (2) at a selected wavelength outside a wavelength range of lines Atomic optical emission of plasma (19) glow discharge.
    [0011]
    11. A glow discharge spectrometry system according to one of claims 1 to 10 wherein the detection means (8, 81, 82, 83, 84) comprises a polarimeter adapted to measure at least one polarized component (35, 36, 37, 38) of the interferometer beam (30).
    [0012]
    The glow discharge spectrometry system according to claim 11 wherein said polarimeter comprises other optical separation means (51, 52, 53, 54, 55) arranged to separate the interferometric beam into a plurality of polarized components and a plurality of detectors (81, 82, 83, 84) adapted to respectively detect a polarized component (35, 36, 37, 38) of the plurality of polarized components of the interferometric signal (40).
    [0013]
    13. A method of glow discharge spectrometry and in situ measurement of the etching depth of a sample comprising the steps of: - placing a solid sample (10) in a glow discharge lamp (60), sample (10) having, on the same face, a first zone (11) exposed to an etching plasma (19) and a second zone (12) protected from etching plasma (19); and analysis by optical emission spectrometry and / or mass spectrometry of at least one signal representative of excited and / or ionized species (71) of the glow discharge plasma (19), as a function of the exposure time of the first zone (11) to said plasma; - emission of a light beam (2); spatial or angular separation of the light beam (2) into a first incident beam (21) and a second incident beam (22); - Orientation, respectively, of the first incident beam (21) to the first zone (11) along a first optical path and the second incident beam (22) towards the second zone (12) along a second optical path, so as to form a first reflected beam (31) by reflection on the first zone and, respectively, a second reflected beam (32) by reflection on the second zone (12), - optical recombination of the first reflected beam (31) and the second reflected beam (32). ) and to form an interferometric beam (30); detecting the interferometric beam (30, 35, 36, 37, 38) to form at least one interferometric signal (40) as a function of the exposure time of the first zone (11) to said plasma; - Processing the at least one interferometric signal (40) to extract a depth measurement erosion crater based on the exposure time of the first zone (11) to said plasma.
    [0014]
    14. A method of glow discharge spectrometry and in situ measurement of the etching depth of a sample according to claim 13 further comprising the following steps: - processing of the interferometric signal (40) to extract a measurement of the phase ( PHI) of the interferometric signal (40) as a function of the exposure time of the first zone (11) to said plasma (19); determination at each instant t of an instant etching speed Ve of the first zone (11) of the sample (10), by application of the following formula: V = LAMBDA x dPHI e 4 x 7r dt where LAMBDA represents the wavelength of the light source (1) and dPHI / dt the derivative with respect to the phase time (PHI) of the interferometric signal (40) measured.
    [0015]
    15. A method of glow discharge spectrometry and in situ measurement of the etching depth of a sample according to claim 13 or 14 wherein the etching plasma (19) operates in pulse mode, alternating a phase where the plasma is on and another phase where the plasma is off, and comprising the following steps: - the detection of the at least one interferometric signal (40) is triggered during the phases where the plasma is lit and / or respectively during the phases where the plasma is off, so as to differentiate an interferometric signal associated with the phases in which the plasma is lit with another interferometric signal associated with the phases in which the plasma is off, - processing of the interferometric signal associated with the phases in which the plasma is lit and / or respectively of the other interferometric signal associated with the phases where the plasma is extinguished so as to correct the depth measurement of the crater e erosion induced drifts during the phases where the plasma is lit and / or respectively during the phases when the plasma is off.
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    同族专利:
    公开号 | 公开日
    EP3137881A1|2017-03-08|
    US10073038B2|2018-09-11|
    US20170045457A1|2017-02-16|
    CN106662531B|2019-12-17|
    EP3137881B1|2018-08-15|
    JP2017516089A|2017-06-15|
    CN106662531A|2017-05-10|
    WO2015166186A1|2015-11-05|
    JP6581600B2|2019-09-25|
    FR3020684B1|2017-05-19|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    JP2002048519A|2000-08-03|2002-02-15|Toshiba Corp|Method and instrument for measuring difference in level, and method of manufacturing semiconductor device|
    JP2002129364A|2000-10-20|2002-05-09|Lec:Kk|Method for displaying progress of etching and monitoring device of etching process|
    FR2843801A1|2002-08-20|2004-02-27|Jobin Yvon Sas|Emission spectrometer solid sample composition determination having luminous discharge source creating surface atom/ion plasma and optical collection unit having mechanism limiting collection volume along common focus axis.|
    US20050287815A1|2004-06-29|2005-12-29|Shouliang Lai|Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes|
    WO2012077652A1|2010-12-08|2012-06-14|株式会社 島津製作所|Etching monitoring apparatus|
    US20130314692A1|2012-05-18|2013-11-28|Shimadzu Corporation|Etching monitor device|WO2018109410A1|2016-12-16|2018-06-21|Horiba France Sas|Method and instrument for measuring etch depth by differential polarimetric interferometry and glow discharge spectrometry apparatus comprising such a measuring instrument|FR1250594A|1959-12-03|1961-01-13|Neofeu|Improvements to safety devices against falls and similar devices|
    JPH03282205A|1990-03-29|1991-12-12|Mitsubishi Electric Corp|Thickness measuring apparatus|
    JPH07142454A|1993-11-17|1995-06-02|Tokyo Electron Ltd|Plasma processing system|
    US5691540A|1996-04-30|1997-11-25|Ibm Corporation|Assembly for measuring a trench depth parameter of a workpiece|
    JP3881125B2|1999-02-17|2007-02-14|レーザーテック株式会社|Level difference measuring apparatus and etching monitor apparatus and etching method using the level difference measuring apparatus|
    JP2001041890A|1999-08-03|2001-02-16|Nippon Light Metal Co Ltd|Analyzing method in depth direction by utilizing glow discharge|
    DE60133026T2|2000-08-28|2009-02-19|Cognitens Ltd.|ACCURATE ALIGNMENT OF IMAGES IN DIGITAL PICTURE SYSTEMS BY ADJUSTING POINTS IN THE PICTURES|
    EP1205962A1|2000-11-10|2002-05-15|Jobin Yvon S.A.|Method for monitoring and/or controlling the status of a plasma in a plasma spectrometer and spectrometer for implementing such a method|
    DE60105386T2|2001-02-01|2005-02-24|Jobin Yvon S.A.S.|Apparatus and method for real time determination of a solid state composition as a function of sample depth|
    US6585908B2|2001-07-13|2003-07-01|Axcelis Technologies, Inc.|Shallow angle interference process and apparatus for determining real-time etching rate|
    DE102006016229B4|2006-03-29|2010-05-27|Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V.|Method and device for the determination of compositions of a solid sample by means of glow discharge spectroscopy and for the determination of height differences simultaneously thereto|
    JP2010122004A|2008-11-18|2010-06-03|Canon Inc|Measurement apparatus, measurement method, computer, program and, exposure apparatus|
    JP5588812B2|2010-09-30|2014-09-10|日立オートモティブシステムズ株式会社|Image processing apparatus and imaging apparatus using the same|
    CN102543648A|2010-12-24|2012-07-04|北京有色金属研究总院|Glow discharge atomizer and use method thereof|
    CN102829732B|2011-06-15|2016-07-06|钢研纳克检测技术有限公司|A kind of twin-laser On-line sampling system device and method for glow-discharge sputtering depth survey|
    JP5930623B2|2011-07-29|2016-06-08|株式会社ミツトヨ|Displacement measuring device and offset correction method|JP6869623B2|2017-10-26|2021-05-12|住友重機械工業株式会社|Laser processing equipment|
    JP3217378U|2018-05-24|2018-08-02|株式会社島津製作所|MALDI ion source and mass spectrometer|
    CN109752366A|2019-03-01|2019-05-14|本钢板材股份有限公司|Method that is a kind of while measuring multielement content in potassium steel|
    US20210199587A1|2019-12-31|2021-07-01|Illumina, Inc.|Autofocus functionality in optical sample analysis.|
    CN111484003B|2020-03-31|2021-10-22|常州机电职业技术学院|Dielectric barrier discharge graphene preparation device and preparation method|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1453997A|FR3020684B1|2014-04-30|2014-04-30|SYSTEM AND METHOD FOR LUMINESCENT DISCHARGE SPECTROMETRY AND IN SITU MEASUREMENT OF THE DEPOSITION DEPTH OF A SAMPLE|FR1453997A| FR3020684B1|2014-04-30|2014-04-30|SYSTEM AND METHOD FOR LUMINESCENT DISCHARGE SPECTROMETRY AND IN SITU MEASUREMENT OF THE DEPOSITION DEPTH OF A SAMPLE|
    EP15725819.5A| EP3137881B1|2014-04-30|2015-04-28|Glow discharge spectroscopy method and system for measuring in situ the etch depth of a sample|
    PCT/FR2015/051156| WO2015166186A1|2014-04-30|2015-04-28|Glow discharge spectroscopy method and system for measuring in situ the etch depth of a sample|
    CN201580034089.6A| CN106662531B|2014-04-30|2015-04-28|Glow discharge spectroscopy method and system for in situ measurement of etch depth of a sample|
    JP2016564981A| JP6581600B2|2014-04-30|2015-04-28|Glow discharge spectroscopic method and system for in-situ measurement of sample etching depth|
    US15/305,367| US10073038B2|2014-04-30|2015-04-28|Glow discharge spectroscopy method and system for measuring in situ the etch depth of a sample|
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